AZIZULRAHMAN, N. A.; ZAINUL ARIFFIN, Khairul Nabilah. Modelling of Silicon Carbide (SiC) Schottky Barrier Diode for High-Temperature Terahertz Applications. Semarak Proceedings of Applied Sciences and Engineering Technology, [S. l.], v. 1, n. 1, p. 134–143, 2025. DOI: 10.37934/spaset.1.1.134143a. Disponível em: https://semarakilmu.my/index.php/spaset/article/view/37. Acesso em: 30 apr. 2025.