Modelling of Silicon Carbide (SiC) Schottky Barrier Diode for High-Temperature Terahertz Applications

Abstract

Silicon carbide (SiC) has emerged as a promising semiconductor material due to its wide bandgap and superior thermal conductivity, enabling robust performance in high-temperature and terahertz (THz) frequency applications. This study focuses on optimizing SiC Schottky Barrier Diodes (SBDs) for cutting-edge electronics designed to operate in extreme environments. Using advanced simulation tools like COMSOL Multiphysics and Advanced Design System (ADS), this research explores the intricate relationships between semiconductor properties, device architectures, and manufacturing techniques. Key parameters such as energy band diagrams, electric fields, doping profiles, bandgap, and Schottky barrier height are analyzed under varying conditions, including temperature and doping concentrations. Preliminary computational results demonstrate that SiC SBDs outperform their silicon counterparts, offering superior efficiency, reliability, and stability in high-temperature terahertz applications. This work highlights the potential of SiC-based devices to drive advancements in power electronics and high-frequency technologies, paving the way for their widespread use in aerospace, automotive, and industrial applications.